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warp2 series igbt with ultrafast soft recovery diode IRGP50B60PD1 1 www.irf.com 12/15/03 features ? npt technology, positive temperature coefficient ? lower v ce (sat) ? lower parasitic capacitances ? minimal tail current ? hexfred ultra fast soft-recovery co-pack diode ? tighter distribution of parameters ? higher reliability benefits ? parallel operation for higher current applications ? lower conduction losses and switching losses ? higher switching frequency up to 150khz e g n-channel c v ces = 600v v ce(on) typ. = 2.00v @ v ge = 15v i c = 33a equivalent mosfet parameters r ce(on) typ. = 61m ? i d (fet equivalent) = 50a applications ? telecom and server smps ? pfc and zvs smps circuits ? uninterruptable power supplies ? consumer electronics power supplies to-247ac g c e smps igbt
absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 75 i c @ t c = 100c continuous collector current 45 i cm pulse collector current (ref. fig. c.t.4) 150 i lm clamped inductive load current 150 a i f @ t c = 25c diode continous forward current 40 i f @ t c = 100c diode continous forward current 15 i frm maximum repetitive forward current 60 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 390 w p d @ t c = 100c maximum power dissipation 156 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.32 c/w r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 1.7 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 weight ??? 6.0 (0.21) ??? g (oz)
IRGP50B60PD1 2 www.irf.com notes: r ce(on) typ. = equivalent on-resistance = v ce(on) typ./ i c , where v ce(on) typ.= 2.00v and i c =33a. i d (fet equivalent) is the equivalent mosfet i d rating @ 25c for applications up to 150khz. these are provided for comparison purposes (only) with equivalent mosfet sol utions. v cc = 80% (v ces ), v ge = 15v, l = 28 h, r g = 22 ?. pulse width limited by max. junction temperature. energy losses include "tail" and diode reverse recovery, data generated with use of diode 30eth06. c oes eff. is a fixed capacitance that gives the same charging time as c oes while v ce is rising from 0 to 80% v ces . c oes eff.(er) is a fixed capacitance that stores the same energy as c oes while v ce is rising from 0 to 80% v ces . electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.31?v/c v ge = 0v, i c = 1ma (25c-125c) r g internal gate resistance ? 1.7 ? ? 1mhz, open collector ?2.002.35 i c = 33a, v ge = 15v 4, 5,6,8,9 v ce(on) collector-to-emitter saturation voltage ? 2.45 2.85 v i c = 50a, v ge = 15v ?2.602.95 i c = 33a, v ge = 15v, t j = 125c ?3.203.60 i c = 50a, v ge = 15v, t j = 125c v ge(th) gate threshold voltage 3.0 4.0 5.0 v i c = 250a 7,8,9 ? v ge(th) / ? tj threshold voltage temp. coefficient ? -10 ? mv/c v ce = v ge , i c = 1.0ma gfe forward transconductance ? 41 ? s v ce = 50v, i c = 33a, pw = 80s i ces collector-to-emitter leakage current ? 5.0 500 a v ge = 0v, v ce = 600v ?1.0?ma v ge = 0v, v ce = 600v, t j = 125c v fm diode forward voltage drop ? 1.30 1.70 v i f = 15a, v ge = 0v 10 ?1.201.60 i f = 15a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v, v ce = 0v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig qg total gate charge (turn-on) ? 205 308 i c = 33a 17 q gc gate-to-collector charge (turn-on) ? 70 105 nc v cc = 400v ct1 q ge gate-to-emitter charge (turn-on) ? 30 45 v ge = 15v e on turn-on switching loss ? 255 305 i c = 33a, v cc = 390v ct3 e off turn-off switching loss ? 375 445 j v ge = +15v, r g = 3.3 ? , l = 200h e total total switching loss ? 630 750 tj = 25c t d(on) turn-on delay time ? 30 40 i c = 33a, v cc = 390v ct3 t r rise time ? 10 15 ns v ge = +15v, r g = 3.3 ? , l = 200h t d(off) turn-off delay time ? 130 150 t j = 25c t f fall time ? 11 15 e on turn-on switching loss ? 580 700 i c = 33a, v cc = 390v ct3 e off turn-off switching loss ? 480 550 j v ge = +15v, r g = 3.3 ? , l = 200h 11,13 e total total switching loss ? 1060 1250 t j = 125c wf1,wf2 t d(on) turn-on delay time ? 26 35 i c = 33a, v cc = 390v ct3 t r rise time ? 13 20 ns v ge = +15v, r g = 3.3 ? , l = 200h 12,14 t d(off) turn-off delay time ? 146 165 t j = 125c wf1,wf2 t f fall time ? 15 20 c ies input capacitance ? 3648 ? v ge = 0v 16 c oes output capacitance ? 322 ? v cc = 30v c res reverse transfer capacitance ? 56 ? pf f = 1mhz c oes eff. effective output capacitance (time related) ?215? v ge = 0v, v ce = 0v to 480v 15 c oes eff. (er) effective output capacitance (ener gy related) ?163? t j = 150c, i c = 150a 3 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 22 ? , v ge = +15v to 0v t rr diode reverse recovery time ? 42 60 ns t j = 25c i f = 15a, v r = 200v, 19 ?74120 t j = 125c di/dt = 200a/s q rr diode reverse recovery charge ? 80 180 nc t j = 25c i f = 15a, v r = 200v, 21 ? 220 600 t j = 125c di/dt = 200a/s i rr peak reverse recovery current ? 4.0 6.0 a t j = 25c i f = 15a, v r = 200v, 19,20,21,22 ?6.510 t j = 125c di/dt = 200a/s ct5 conditions
IRGP50B60PD1 www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - reverse bias soa t j = 150c; v ge =15v fig. 4 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 5 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 125c; tp = 80s 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 400 450 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 50 60 70 80 90 i c ( a )
IRGP50B60PD1 4 www.irf.com fig. 8 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = 125c fig. 12 - typ. switching time vs. i c t j = 125c; l = 200h; v ce = 390v, r g = 3.3 ? ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 11 - typ. energy loss vs. i c t j = 125c; l = 200h; v ce = 390v, r g = 3.3 ? ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 10 - typ. diode forward characteristics tp = 80s fig. 7 - typ. transfer characteristics v ce = 50v; tp = 10s 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 0 102030405060 i c (a) 0 200 400 600 800 1000 1200 e n e r g y ( j ) e off e on 0 10 20 30 40 50 60 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 5 10 15 20 v ge (v) 0 100 200 300 400 500 600 700 800 900 i c e ( a ) t j = 25c t j = 125c t j = 125c t j = 25c 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f i nst ant aneous f or w ard c urrent - i (a ) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
IRGP50B60PD1 www.irf.com 5 fig. 14 - typ. switching time vs. r g t j = 125c; l = 200h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 13 - typ. energy loss vs. r g t j = 125c; l = 200h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 15 - typ. output capacitance stored energy vs. v ce fig. 17 - typical gate charge vs. v ge i ce = 33a 0 5 10 15 20 25 r g ( ? ) 300 400 500 600 700 800 900 1000 e n e r g y ( j ) e on e off 0 5 10 15 20 25 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 200 250 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 400v 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 100 200 300 400 500 600 700 v ce (v) 0 10 20 30 40 e o e s ( j ) fig. 18 - normalized typ. v ce(on) vs. junction temperature i c = 33a, v ge = 15v -50 0 50 100 150 200 t j (c) 0.8 1.0 1.2 1.4 n o r m a l i z e d v c e ( o n ) ( v )
IRGP50B60PD1 6 www.irf.com

20 40 60 80 100 100 1000 f di /dt - (a/s) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 0 200 400 600 800 100 1000 f di /dt - (a/s) rr q - (nc) i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 100 1000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j
IRGP50B60PD1 www.irf.com 7 fig. 24. maximum transient thermal impedance, junction-to-case (diode) fig 23. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.363 0.000112 0.864 0.001184 0.473 0.032264 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.157 0.000346 0.163 4.28 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri
IRGP50B60PD1 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg 80 v dut 480v 1k vcc du t 0 l fig.c.t.4 - resistive load circuit rg vcc dut r = v cc i cm fig.c.t.3 - switching loss circuit fig. c.t.5 - reverse recovery parameter test circuit reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust pfc diode l rg vcc dut / driver
IRGP50B60PD1 www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 25c using fig. ct.3 fig. wf2 - typ. turn-on loss waveform @ t j = 25c using fig. ct.3 fig. wf3 - reverse recovery waveform and definitions -100 -50 0 50 100 150 200 250 300 350 400 450 500 550 600 -0.20 0.00 0.20 0.40 time (s) v ce (v) -10 0 10 20 30 40 50 60 i ce (a) 90% i ce 5% i ce 5% v ce eof f tf -50 0 50 100 150 200 250 300 350 400 450 -0.10 0.00 0.10 0.20 time(s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) 90% i ce 5% v ce 10% i ce eon loss tr test current

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IRGP50B60PD1 10 www.irf.com to-247ac package is not recommended for surface mount application. dimensions are shown in millimeters (inches)
dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 2 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 dimensions are shown millimeters (inches). 4 conforms to jedec outline to-247ac. lead assignments 1 - gate 2 - collector 3 - emitter 4 - collector * longer leaded (20mm) version available (to-247ad) to order add "-e" suffix to part number
lot code ww = week yy = year notes : t his part marking information applies to devices produced before 02/26/2001 or for example: this is an irfpe30 with assembly lot code 3a1q assembly logo rectifier international 3a1q irfpe30 part number (yyww) dat e code 9302 par ts manufactur ed i n gb . notes: t his part marking information applies to devices produced after 02/26/2001 example: as s embled on ww 35, 2000 lot code 5657 with assembly this is an irfpe30 in the assembly line "h" 035h logo international rectifier irfpe30 lot code assembly 56 57 part number dat e code year 0 = 2000 week 35 line h ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/03 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.

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